Influence of preparation temperature on photoluminescence of amorphous ZnO/TiO₂ films

Using pure ZnO and TiO2 grains, ZnO/TiO2thin films were fabricated on Si substrates by electron beam evaporation method in O2 environment. The structure and photoluminescence of ZnO/TiO2 thin films grown under different temperatures were investigated. The structural properties were investigated by X-ray diffraction and Raman spectra. The data indicate that the ZnO film deposited on TiO2 buffer layer are amorphous. Their optical properties were investigated by photoluminescence spectra. The photoluminescence measurements show that the amorphous ZnO/TiO2 thin film prepared at 250℃ emits strong UV at 389nm, strong violet light at 431nm and strong greenyellow light at 519nm.