杨超普, 方文卿, 刘明宝, 周春生, 张美丽. MOCVD原位红外测温方法的比较研究[J]. 应用光学, 2016, 37(2): 297-302. DOI: 10.5768/JAO201637.0206002
引用本文: 杨超普, 方文卿, 刘明宝, 周春生, 张美丽. MOCVD原位红外测温方法的比较研究[J]. 应用光学, 2016, 37(2): 297-302. DOI: 10.5768/JAO201637.0206002
Yang Chaopu, Fang Wenqing, Liu Mingbao, Zhou Chunsheng, Zhang Meili. Comparative study on in situ infrared thermometry methods of MOCVD[J]. Journal of Applied Optics, 2016, 37(2): 297-302. DOI: 10.5768/JAO201637.0206002
Citation: Yang Chaopu, Fang Wenqing, Liu Mingbao, Zhou Chunsheng, Zhang Meili. Comparative study on in situ infrared thermometry methods of MOCVD[J]. Journal of Applied Optics, 2016, 37(2): 297-302. DOI: 10.5768/JAO201637.0206002

MOCVD原位红外测温方法的比较研究

Comparative study on in situ infrared thermometry methods of MOCVD

  • 摘要: MOCVD原位红外测温方法主要有单色辐射测温法与双波长比色测温法。利用薄膜等厚干涉模型与Kirchhoff定律计算了Si (111)衬底生长10 m GaN外延片的940 nm、1 550 nm光谱发射率,以Thomas Swan CSS MOCVD为例,比较了500 ℃至1 300 ℃范围内,940 nm单色辐射测温法、1 550 nm单色辐射测温法、940 nm与1 550 nm双波长比色测温法的相对误差和相对灵敏度,以及单色辐射测温法与双波长比色测温法的校准修正,并利用940 nm与1 550 nm双波长比色测温法在线监测了Si (111)衬底生长InGaN/GaN MQW 结构LED外延片过程中的温度。研究表明:940 nm与1 550 nm双波长比色测温法在相对误差及有效探测孔径修正校准上优于940 nm单色辐射测温法和1 550 nm单色辐射测温法,该结论可为MOCVD原位红外测温设备开发提供参考。

     

    Abstract: The in situ infrared thermometry methods of metal organic chemical vapor deposition (MOCVD) mainly include monochromatic radiation thermometry and doublewavelength colorimetric thermometry. We calculated the 940 nm and 1 550 nm spectral emissivity of 10 m GaN on silicon (111) substrate by film thickness interference model and Kirchhoffs law,compared the relative error and relative sensitivity among 940 nm monochromatic radiation thermometry, 1 550 nm monochromatic radiation thermometry, 940 nm /1 550 nm doublewavelength colorimetric thermometry within the scope of 500 ℃ to 1 300 ℃ by taking the Thomas Swan CSS MOCVD as an example,as well as the calibration betweenmonochromatic radiation thermometry and doublewavelength colorimetric thermometry.Moreover,by using the 940 nm /1 550 nm doublewavelength colorimetric thermometry,the temperature of LED epitaxial wafer with InGaN/GaN MQW structure growing on silicon(111) substrate was monitored online.The result shows that the 940 nm/1 550 nm doublewavelength colorimetric thermometry offers advantages over the 940 nm and 1 550 nm monochromatic radiation thermometry in terms of relative error and correction. The conclusion can provide reference for the in situ infrared thermometry design of MOCVD.

     

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