Abstract: In order to process code disc pattern on the Ge crystal base met the needs , we did the technological experiments, through adopting the positive photoresist and negative photoresist, in the technological ways that coating before exposure and exposure before coating,respectively.We analyzed the measurement results, and came to the conclusion that the optimum matching scheme of reticle pattern processing technology for Ge crystal optical encoder was adopting the negative photoresist in accordance with the exposure before coating. Experimental results show that the finished graphic pattern has obvious contrast, the asymmetry distribution of edge is lower than 0.008 mm. It can be applied to the manufacture of the reticle pattern on Ge base.