基于AlN膜钝化层VCSEL激光器热特性的研究

Thermal characteristic analysis of AlN film passivation layer of VCSEL

摘要: 用ANSYS有限元热分析软件模拟了基于AlN膜钝化层和SiO2膜钝化层的高功率垂直腔面发射半导体激光器(VCSEL)器件内部的热场分布和热矢量分布。经模拟得到基于AlN膜钝化层的VCSEL热阻为3.123℃/W，而基于SiO2膜钝化层的VCSEL的热阻为4.377℃/W。经实验测得基于AlN膜钝化层的VCSEL热阻为3.54℃/W，而基于SiO2膜钝化层的VCSEL的热阻为4.75℃/W，模拟结果与实验结果吻合较好。

Abstract: Based on ANSYS finite-element software, internal distribution of thermal fields and heat flow vector distribution of high power VCSE in AlN film passivation layer and SiO2 film passivation layer were analyzed. According to modeling, the Rthjc of VCSEL in AlN film is 3.123℃/W and the Rthjc of VCSEL in SiO2 film is 4.377℃/W. Experiment indicates that the Rthjc of VCSEL in AlN film is 3.54℃/W and the Rthjc of VCSEL in SiO2 film is 4.75℃/W.