李朝阳, 王勇刚, 黄骝. 离子注入SI—GaAs做激光器被动调Q元件的研究[J]. 应用光学, 2004, 25(4): 59-62.
引用本文: 李朝阳, 王勇刚, 黄骝. 离子注入SI—GaAs做激光器被动调Q元件的研究[J]. 应用光学, 2004, 25(4): 59-62.
LI Zhao-yang, WANG Yong-gang, HUANG Liu. Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs[J]. Journal of Applied Optics, 2004, 25(4): 59-62.
Citation: LI Zhao-yang, WANG Yong-gang, HUANG Liu. Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs[J]. Journal of Applied Optics, 2004, 25(4): 59-62.

离子注入SI—GaAs做激光器被动调Q元件的研究

Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs

  • 摘要: 本文从半导体材料GaAs的能级结构出发,探讨了GaAs做固体激光器被动调Q器件的可行性,对离子注入半绝缘GaAs用做Nd:YAG激光器中被动调Q元件的机理进行了实验研究,实验中腔型选择直腔式平平腔,Nd:YAG采用脉冲氙灯抽运,在腔型1Hz下获得了单脉冲宽度为62ns的调Q波形输出。

     

    Abstract: Proceeding from the SI-GaAs's energy level structure, the feasibility of using the ion-implanted GaAs semiconductor material as a passive Q-switched unit of solid-state lasers is discussed. The dynamic characteristic of GaAs used as passive Q-switch device is investigated experimentally.In the experiment, flat-flat cavity was adopted and (Nd∶YAG) was pumped by a xenon lamp,and the Q-switched waveform of 62ns single pulse width was obtained at repetition rate of 1Hz.

     

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