刘术林, 彭磊, 许志清, 刘文伟, 邓广绪, 李军国. 高性能微通道板除气过程中电阻的变化[J]. 应用光学, 2007, 28(6): 732-736.
引用本文: 刘术林, 彭磊, 许志清, 刘文伟, 邓广绪, 李军国. 高性能微通道板除气过程中电阻的变化[J]. 应用光学, 2007, 28(6): 732-736.
LIU Shu-lin, PENG Lei, XU Zhi-qing, LIU Wen-wei, DENG Guang-xu, LI Jun-guo. Resistance stability of high-performance microchannel plate during degassing process[J]. Journal of Applied Optics, 2007, 28(6): 732-736.
Citation: LIU Shu-lin, PENG Lei, XU Zhi-qing, LIU Wen-wei, DENG Guang-xu, LI Jun-guo. Resistance stability of high-performance microchannel plate during degassing process[J]. Journal of Applied Optics, 2007, 28(6): 732-736.

高性能微通道板除气过程中电阻的变化

Resistance stability of high-performance microchannel plate during degassing process

  • 摘要: 比较了高性能微通道板和标准型微通道板在经过相同或类似制管工艺处理前、后电阻的变化,测定了高性能微通道板分别在真空烘烤和2个不同阶段电子清刷后电阻随电压及温度的变化关系。实验结果表明:高性能微通道板的热稳定性优于标准型微通道板,其电阻温度系数为-0.007/℃;经过第二阶段清刷后,电阻随电压的变化缓慢,电压系数为-1.11×10-4V-1;用这种材料和工艺制作的低电阻、大动态范围、高稳定性微通道板可满足特种探测器的需求。

     

    Abstract: The resistance variations of the high-performance microchannel plate and the standard microchannel plate processed by the same or similar image intensifier technique were compared before and after tube process. The variation of the resistance with voltage and temperature was tested after the high-performance microchannel plate was baked in vacuum and scrubbed by electrons in two different phases. The results indicate that the thermal stability of the highperformance microchannel plate is superior to that of the standard one, and its resistance temperature coefficient is -0.007/℃.The change of resistance with voltage is slow after the electron scrubbing in the second phase, and then the voltage coefficient is -1.11×10-4V-1. The MCP made with this material and technology has lower resistance, larger dynamic range and higher stability, which can meet the requirement of the special detectors.

     

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