朱宇峰, 张太民, 聂晶, 师宏立. 低磁控溅射率MCP防离子反馈膜工艺研究[J]. 应用光学, 2008, 29(3): 360-363.
引用本文: 朱宇峰, 张太民, 聂晶, 师宏立. 低磁控溅射率MCP防离子反馈膜工艺研究[J]. 应用光学, 2008, 29(3): 360-363.
ZHU Yu-feng, ZHANG Tai-min, NIE Jing, SHI Hong-li. Preparation of ion-feedback barrier film on MCP[J]. Journal of Applied Optics, 2008, 29(3): 360-363.
Citation: ZHU Yu-feng, ZHANG Tai-min, NIE Jing, SHI Hong-li. Preparation of ion-feedback barrier film on MCP[J]. Journal of Applied Optics, 2008, 29(3): 360-363.

低磁控溅射率MCP防离子反馈膜工艺研究

Preparation of ion-feedback barrier film on MCP

  • 摘要: 为消除反馈正离子对三代微光夜视器件光阴极的有害轰击,提高微光像增强器的工作寿命,开展了低磁控溅射率法沉积微通道板(MCP)Al2O3防离子反馈膜的工艺研究。通过优化制备工艺,获得了制备MCP防离子反馈膜的最佳沉积条件:溅射电压1000V,溅射气压(4~5)×10-2 Pa,沉积速率0.5nm/min等。研究结果表明:在此工艺条件下,能够制备出均匀、致密且通孔满足质量要求的MCP防离子反馈膜。如果偏离这一最佳工艺条件,制备出的MCP防离子反馈膜膜层疏松、不连续,且通孔不能满足要求。

     

    Abstract: To eliminate the bombardment of feedback ion to a photocarhode of a Gen. Ⅲ LLL night vision system and increase its operating lifetime,the preparation technique of depositing a Al2O3 ion-feedback barrier film on MCP was investigated by low-magnetron sputtering technique. The optimal depositon conditions for preparing the ion-feedback barrier film on MCP were obtained, such as operating voltage of 1000V, sputtering pressure of (4~5)×10-2Pa and deposition rate of 0.5nm/min. The results show that the ion-feedback barrier film deposited under this optimal conditions can meet the uniformity, compactness and less pinhole requirements.

     

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