DU Gao-she, BU Ying-hua, XUE Chang-jia, YANG Hua-mei, CHEN Sheng-shi, LI Gang. High power semiconductor laser combined source with good spot uniformity[J]. Journal of Applied Optics, 2011, 32(3): 574-578.
Citation: DU Gao-she, BU Ying-hua, XUE Chang-jia, YANG Hua-mei, CHEN Sheng-shi, LI Gang. High power semiconductor laser combined source with good spot uniformity[J]. Journal of Applied Optics, 2011, 32(3): 574-578.

High power semiconductor laser combined source with good spot uniformity

  • In order to obtain a semiconductor laser source with higher output power and good spot uniformity, two semiconductor laser beams are combined into one laser beam of higher power by using a polarizing beam splitter and transmitting through one optical channel according to the polarization characteristic of the semiconductor laser. The divergence angle of beam along the slow axis direction of each laser is expanded before combined by an aspheric lens so as to be consistent with the divergence angle along the fast axis direction. The experiment results show that this combined semiconductor laser source has good spot uniformity and its output power is the sum of two laser output powers, which meets the laser power and spot uniformity requirements for laser guidance in military applications.
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