Thermal characteristic analysis of AlN film passivation layer of VCSEL

Based on ANSYS finite-element software, internal distribution of thermal fields and heat flow vector distribution of high power VCSE in AlN film passivation layer and SiO2 film passivation layer were analyzed. According to modeling, the Rthjc of VCSEL in AlN film is 3.123℃/W and the Rthjc of VCSEL in SiO2 film is 4.377℃/W. Experiment indicates that the Rthjc of VCSEL in AlN film is 3.54℃/W and the Rthjc of VCSEL in SiO2 film is 4.75℃/W.