Electrical and optical properties of transparent and conductive Aldoped ZnO thin film

In this paper，Al∶ZnO film was prepared on glass substrate with solgel method successfully．The films was annealed at temperatures of 100℃～400℃ in two different conditions, atmosphere and vacuum. The microstructures，electrical and optical properties were analyzed with Xray diffraction (XRD) spectroscopy. The result shows that it has a polycrystalline hexagonal wurtzite structure with highly preferred orientation along the (002) plane. The annealing treatment in vacuum is of benefit to the improvement of the crystalline condition of the thin film，the steep increase of the free carrier concentration and the decrease of the resistivity, and it has no obvious effect on the film transmittance.