LI Zhao-yang, WANG Yong-gang, HUANG Liu. Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs[J]. Journal of Applied Optics, 2004, 25(4): 59-62.
Citation: LI Zhao-yang, WANG Yong-gang, HUANG Liu. Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs[J]. Journal of Applied Optics, 2004, 25(4): 59-62.
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Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs

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  • Proceeding from the SI-GaAs's energy level structure, the feasibility of using the ion-implanted GaAs semiconductor material as a passive Q-switched unit of solid-state lasers is discussed. The dynamic characteristic of GaAs used as passive Q-switch device is investigated experimentally.In the experiment, flat-flat cavity was adopted and (Nd∶YAG) was pumped by a xenon lamp,and the Q-switched waveform of 62ns single pulse width was obtained at repetition rate of 1Hz.
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