Resistance stability of high-performance microchannel plate during degassing process

The resistance variations of the high-performance microchannel plate and the standard microchannel plate processed by the same or similar image intensifier technique were compared before and after tube process. The variation of the resistance with voltage and temperature was tested after the high-performance microchannel plate was baked in vacuum and scrubbed by electrons in two different phases. The results indicate that the thermal stability of the highperformance microchannel plate is superior to that of the standard one, and its resistance temperature coefficient is -0.007/℃.The change of resistance with voltage is slow after the electron scrubbing in the second phase, and then the voltage coefficient is -1.11×10-4V-1. The MCP made with this material and technology has lower resistance, larger dynamic range and higher stability, which can meet the requirement of the special detectors.