Assessment of neutron-irradiated 3C-SiC implanted at 800 ℃

[1]Myles R A, Frame D J, Huntingford C, et al. Warming caused by cumulative carbon emissions towrds trillionth tonne [J]. Nature, 2009, 458:1163-1166.
[2]Lund H. Renewable energy strategies for sustainable development [J]. Energy,  2007, 32(6):912-919.
[3]Borchers A M, Duke M J,Parsons G R. Does willingness pay for green energy differ by source? [J]. Energy Policy, 2007, 35(6):3327-3334.
[4]Vaillancourt K, Labriet M, Loulou R,et al. The role of nuclear energy in long-term climate scenarios: An analysis with the World-TIMES model [J]. Energy Policy, 2008,  36(7):2296-2307.
[5]Menyah K, Wolde-Rufael Y. CO2 emissions, nuclear energy, renewable energy and economic growth in the US [J]. Energy Policy, 2010, 38(6):2911-2915.
[6]Wacholz W. The present state of the HTR concept based on experience gained frm AVR and THTR [J]. International Working Group on Gas-Cooled Reactors, IWGGCAR, 1998, 19:61-70.
[7]Snead L L, Jones R H, Kohyama A,et al. Status of silicon carbide composites for fusion [J]. J. Nucl. Mater., 1996, 233-237:26-36.
[8]Snead L L, Zinkle S J, Hay J C,et al. Amorphization of SiC under ion and neutron irradiation [J]. Nucl.  Instr. and Meth., 1998, B 141:123-132.
[9]Snead L L, Osborne M C, Lowden R A, et al. Low dose irradiation performance of SiC interphase SiC/SiC composites [J]. J. Nucl. Mater., 1998, 253(1):20-30.
[10]Snead L L, Hay J C. Neutron irradiation induced amorphization of silicon carbide[J].  J. Nucl. Mater., 1999, 273(2):213-220.
[11]Katoh K, Hashimoto N, Kondo S, et al. Microstructural development in cubic silicon carbide during irradiation at elevated temperatures [J]. J. Nucl. Mater., 2006, 351(1-3):228-240.
[12]Kondo S, Katoh Y, Snead L L. Microstructural defects in SiC neutron irradiated at very high temperatures [J]. J. Nucl. Mater., 2008, 382(2):160-169.
[13]Katoh Y, Kondo S, Snead L L. Microstructures of beta-silicon carbide after irradiation creep deformation at elevated temperatures [J]. J. Nucl. Mater., 2008, 382(2):170-175.
[14]Kondo S, Katoh Y, Snead L L. Unidirectional formation of tetrehedral voids in irradiated silicon carbide[J].  Appl. Phys. Lett., 2008, 93(16):163110-1 -163110-3.
[15]Katoh Y, Nozawa T, Snead L L, et al. Stability of SiC and its composites at high neutron fluence[J].  J. Nucl. Mater., 2011, 417(1-3):400-405.
[16]Satoh M, Miyagawa S, Kudoh T, et al.  Annealing effect on characteristics of p+n 4H-SiC diode formed by Al ion implantation [J]. Mat. Sci. Forum, 2009, 600-603:023-1026.
[17]Nagano M, Tsuchida H, Suzuki T,et al. Formation of extended defects in 4H-SiC induced by ion implantation/annealing [J]. Mat. Sci. Forum, 2009, 615617:477-480.
[18]Ottaviani L, Biondo S, Morata S, et al. Influence of heating and cooling rates of post-implantation annealing process on al-lmplanted 4H-SiC epitaxial samples[J]. Mat. Sci. Forum, 2010, 645648:717-720.
[19]Lee K K, Laird J S, Ohshima T, et al. Current transient effect in N-channel 6H-SiC MOSFET induced by heavy ion irradiation[J].  Mat. Sci. Forum, 2010, 645-648:1013-1016.
[20]Kups T, Tonisch K, Voelskow M,et al. Structure and lattice location of Ge implanted 4H-SiC[J]. Mat. Sci. Forum, 2009, 600-603:623-626.
[21]Yan F, Devaty R P, Choyke W J, et al. New lines and issues associated with deep defect spectra in electron, proton and 4He ion irradiated 4H SiC[J].  Mat. Sci. Forum, 2010, 645648:411-414.
[22]Holm R T, Gibson J W,Palik E D. Infrared reflectance studies of bulk and epitaxial-film n-type GaAs [J]. J. Appl. Phys., 1977, 48(1):212-223.
[23]Kroon R E. The classical oscillator model and dielectric constants extracted from infrared reflectivity measurements[J].  Infrared Phys. Technol., 2007, 51(1):31-43.
[24]Engelbrecht J A A, Kulkarni M V. Semi-quantitative measurement of wafer surface roughness via infrared spectroscopy [J]. IBM Tech. Discl. Bull., 1982, 24:6060-6034.
[25]Engelbrecht J A A, Hashe N G, Hillie K T,et al. The apparent effect of sample surface damage on the dielectric parameters of GaAs [J].  Physica B, 2007, 401(4):238-241.
[26]Engelbrecht J A A, Deyzel G, Minnaar E G, et al. The influence of neutron-irradiation at low temperatures on the dielectric parameters of 3C-SiC[J].  Physica B, 2014, 439(15):169-172.
[27]Toulemonde M, Dufour C,Paumier E. The ion-matter interaction with swift heavy ions in the light of inelastic thermal spike model [J]. Acta Physica Polonica A, 2006, 109(3):311-322.