电子敏感CMOS部件除气方法

李桐桐; 肖超; 焦岗成; 闫磊; 樊海波; 马靖; 李成林

doi:10.5768/JAO202243.0604019

电子敏感CMOS部件除气方法

doi: 10.5768/JAO202243.0604019

李桐桐^{1, 2,},
肖超^{1, 2},
焦岗成^{1, 2},
闫磊^{1, 2},
樊海波^{1, 2},
马靖^{1, 2},
李成林^{1, 2}

1.
微光夜视技术重点实验室，陕西西安 710065
2.
昆明物理研究所，云南昆明 650223

基金项目: 国家自然科学基金(U2141239)

详细信息

作者简介:
李桐桐（1995—），女，硕士，助理工程师，主要从事数字化微光器件研究。E-mail：Littka@126.com

中图分类号: TN366
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- 文章访问数: 74
- HTML全文浏览量: 36
- PDF下载量: 9
- 被引次数: 0
出版历程
- 收稿日期: 2022-09-04
- 修回日期: 2022-10-11
- 网络出版日期: 2022-11-09
- 刊出日期: 2022-11-14

Degassing method of electronic sensitive CMOS components

LI Tongtong^{1, 2
,},
XIAO Chao^{1, 2},
JIAO Gangcheng^{1, 2},
YAN Lei^{1, 2},
FAN Haibo^{1, 2},
MA Jing^{1, 2},
LI Chenglin^{1, 2}

1.
Science and Technology on Low-Light-Level Night Vision Laboratory, Xi'an 710065, China
2.
Kunming Institute of Physics, Kunming 650223, China

摘要

摘要: 电子轰击有源像素传感器（electron bombarded active pixel sensor, EBAPS）作为真空-固体混合型微光器件，其性能和工作寿命一定程度上取决于器件内部真空度保持情况。分析造成EBAPS器件真空度下降的原因，推断出真空度恶化的严重后果，提出提高和保持EBAPS器件内部真空度的手段，通过搭建超高真空除气系统对EBAPS器件中核心部件电子敏感CMOS部件的放气特性进行了研究，并根据研究结果得到最佳的除气工艺参数，为EBAPS数字化微光器件的制备提供了技术基础。
- 电子轰击有源像素传感器 /
- 电子敏感CMOS /
- 放气特性 /
- 除气工艺
Abstract: Electron bombarded active pixel sensor (EBAPS) is a hybrid vacuum-solid low-level-light device. Its performance and service life depend on the vacuum maintenance of the device to a certain extent. The reasons for the decline of vacuum degree of EBAPS devices were analyzed, the serious consequences of the deterioration of vacuum degree were deduced, and the means to improve and maintain the internal vacuum degree of EBAPS devices were put forward. By constructing an ultra-high vacuum degassing system, the degassing characteristics of the core components of EBAPS electronic sensitive complementary metal-oxide-semiconductor (CMOS) components were studied. According to the research results, the optimal degassing process parameters were obtained, which provided a technical basis for the preparation of EBAPS digital low-level-light devices.
- electron bombarded active pixel sensor /
- electronic sensitive complementary metal-oxide-semiconductor /
- discharging characteristics /
- degassing process

HTML全文

图 1 EBAPS器件结构示意图

Fig. 1 Structure diagram of EBAPS device

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图 2 电子敏感CMOS部件除气系统示意图

1-样品；2-样品放置夹具；3-超高真空腔室；4-四极质谱仪；5-PLC温度控制系统；6-热电偶；7-离子泵；8-分子泵；9-机械泵；10-阀门。

Fig. 2 Schematic diagram of degassing system for electronic sensitive CMOS component

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图 3 实验前质谱峰分布

Fig. 3 Mass spectrum peak distribution before experiment

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图 4 不同烘烤温度下4种气体的离子流变化

Fig. 4 Changes of ion flow of four gases at different drying temperatures

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图 5 4种气体在260 ℃下烘烤3天的离子流变化

Fig. 5 Changes of ion flow of four gases baked at 260 ℃ for 3 days

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