Abstract: Vanadium oxide (VOx) film is a film material extensively used in the infrared thermal imaging detector, so it is important to study its deposition process and obtain the VOx films having high temperature coefficient of resistance (TCR). VOx films were deposited using RF magnetron sputtering with a high purity vanadium metal target (99.99%) at the room temperature. The influence of Ar/O2 ratio and sputtering power on TCR was researched, and the optimized technique parameters were obtained. The resistance properties of VOx films deposited by RF magnetron sputtering under the different process conditions were tested using the avometer and the film composition was tested using X-ray photoelectron spectroscopy (XPS). Results showed the TCR of VOx films was better than 1.8%.