Laser scribing system for a-Si thin film solar cell preparation
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摘要: 非晶硅薄膜太阳能电池制备过程中的激光刻线工艺要求刻线宽度在30 m~50 m之间,死区范围小于300 m,刻线深度符合工艺要求。这不仅要求激光器具有较高的光束质量,而且要求光学系统具有较高的成像质量和较宽的焦深。设计了单激光器四分光路的激光刻线系统。采用设计的激光刻线装置,在1 400 mm1 100 mm3.2 mm玻璃基板上进行刻线试验,分别得到刻线P1,P2,P3的线宽为35 m,50 m和45 m,死区范围(P1至P3的距离)为287 m,最终深度分别为0.98 m,0.24 m和0.58 m,刻线宽度和深度均符合薄膜太阳能电池制备工艺要求。
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关键词:
- 激光刻线系统 /
- 非晶硅薄膜太阳能电池 /
- 刻线
Abstract: The laser scribing process for a-Si (amorphous silicon) thin film solar cell preparation requires the line width of 30 m~50 m, the dead zone of less than 300 m in size, and the compliance of line depth with the process requirements. Thus, the high beam quality of the laser is required, as well as the high imaging quality and wide focal depth of the optical system. A laser scribing system with a single laser and fourway light splitters was designed. With the designed laser scriber, a laser scribing test was done on a 1 400 mm1 100 mm3.2 mm glass substrate. The widths of the scribing lines P1, P2 and P3 were 35 m, 50 m and 45 m, respectively, the dead zone (distance between P1 and P3) was 287 m, and their final depths were 0.98 m, 0.24 m and 0.58 m respectively. The results show that the widths and depths of the scribing lines meet the requirements of thin film solar cell preparation process.-
Keywords:
- laser scribing system /
- a-Si thin film solar cell /
- scribing line
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