高功率窄脉宽半导体激光激励器设计

阎得科; 孙传东; 冯莉; 何浩东; 朱少岚

高功率窄脉宽半导体激光激励器设计

1.
中国科学院西安光学精密机械研究所瞬态光学与光子技术国家重点实验室,陕西西安710119;
2.
中国科学院研究生院,北京100039

详细信息

通讯作者:
阎得科(1982-)，男，河南南阳人，硕士研究生，主要从事激光测距、激光雷达方面的研究。

中图分类号: TN248.4
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出版历程
- 刊出日期: 2011-01-14

ADesign of driving system for high power and narrowpulse-width semiconductor laser

1.
State Key Laboratory of Transient Optics and Photonics,Xi’an Institute of Optics and Precision Mechanics,Chinese Academy of Sciences,Xi’an,710119,China;
2.
Graduate School of Chinese Academy of Sciences,Beijing 100039,China

摘要

摘要: 为了获得高功率窄脉宽半导体激光，设计了半导体激光器相应的激励单元，论述MOSFET作为高速开关的工作机理，分析基于MOSFET作为高速开关产生窄的大电流脉冲的电路模型。为了使MOSFET开关速度尽可能快，根据前述分析，提出推挽式MOSFET栅极驱动方式并设计了触发窄脉冲的发生电路。当激光二极管接入放电回路时，实验表明：激光二极管输出光的峰值功率可达67.5W，脉宽约为20ns。最后，简要分析了影响光脉冲宽度的因素。
- 能量压缩技术 /
- MOSFET高速开关 /
- 推挽式驱动 /
- 窄脉冲 /
- 高功率激光
Abstract: In order to achieve high peak power and narrow pulse-width semiconductor laser, a driving system for the laser was designed. The electrical circuit for producing narrow-high current pulses based on MOSFET as a fast switch for the discharge circuit was analyzed. The working procedure of the MOSFET as a fast switch was discussed. In order to make the MOSFET switch as fast as possible, the push-pull driving circuit was brought forward and the circuit of narrow trigger pulses was designed. When the LD was connected to the RC discharge circuit, the peak power of the emission laser could be up to 67.5W and the full width at half maximum (FWHM) could reach 20ns. Finally, the impact factors on the pulse width of the laser were analyzed.
- power compression technology /
- fast MOSFET switch /
- push-pull driving /
- narrow pulse /
- high power laser

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参考文献(1)

［1］SIGO S. High-power MOSFETS and fast-switching thyristors utilized as opening switches for inductive storage systems［J］. IEEE Transactions on Magnetic,2003,39(1):437-441.［2］ALTON C,RAJI S.Simple MOSFET-based high-voltage nanosecond pulse circuit［J］. IEEE Transactions on Plasma Science, 2004,32(5):1919-1924.［3］杨冶平，杨照金，侯民.激光测距机主要参数校准测量不确定度分析［J］.应用光学，2005，26(4):56-57.YANG Ye-ping, YANG Zhao-jin, HOU Min. The uncertainty analysis of the calibration measurement of main performances for laser range-finders［J］. Journal of Applied Optics,2005,26(4):56-57.(in Chinese with an English abstract) ［4］张在宣，郭宁，余向东，等.小型低值LD激光测距仪的研制［J］.应用光学，2000，21(增刊):9-13.ZHANG Zai-xuan, GUO Ning, YU Xiang-dong, et al. Research of low cost mini LD laser rang finder［J］. Journal of Applied Optics, 2000，21(Sup.):9-13. (in Chinese with an English abstract)［5］王相綦，冯德仁，何宁，等.基于MOSFET亚微秒固态调制器技术的试验研究［J］.中国科学技术大学学报，2007，37(1):99-103. WANG Xiang-qi, FENG De-ren, HE Ning,et al.Test principle research for solid-state modulator technique with sub-micro second based on MOSFETS［J］. Journal of University of Science and Technology of China,2007,37(1):99-103. (in Chinese with an English abstract)［6］王相綦，何宁，冯德仁，等.MOSFET调制器的实验研究［J］.强激光与粒子束，2006，18(9):1569-1572. WANG Xiang-qi, HE Ning, FENG De-ren, et al. Experimental study on MOSFET pulse modulator［J］. High Power Laser and Particle Beams,2006,18(9):1569-1572.［7］LASZLO B. Design and application guide for high speed MOSFET gate drive circuits［M］. USA: Texas Instruments Incorporated, 2002.［8］VREJ B. Power MOSFET basics［M］. Segundo:International Rectifier. EI Segundo. Ca.,2000:9-10.［9］ANDY B. Simple circuit produces a less than 25 nanosecond pulse ［M］.USA:Design ideas, National Instruments, Austin, TX.，2000：188-189.

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文章访问数: 2239
HTML全文浏览量: 93
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高功率窄脉宽半导体激光激励器设计

通讯作者:
阎得科(1982-)，男，河南南阳人，硕士研究生，主要从事激光测距、激光雷达方面的研究。

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ADesign of driving system for high power and narrowpulse-width semiconductor laser

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高功率窄脉宽半导体激光激励器设计

通讯作者: 阎得科(1982-)，男，河南南阳人，硕士研究生，主要从事激光测距、激光雷达方面的研究。

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出版历程

ADesign of driving system for high power and narrowpulse-width semiconductor laser

计量

出版历程

目录

相关数据库

广告合作

友情链接

帮助中心

通讯作者:
阎得科(1982-)，男，河南南阳人，硕士研究生，主要从事激光测距、激光雷达方面的研究。