Responsivity of photoelectric detector irradiated by intense laser
摘要: 响应度R是反映探测器性能的一项重要指标，当探测器被强激光损伤后，光电探测器的响应度将发生改变。设计了一套实时测量探测器响应度的装置，用能量逐渐增加的Nd∶YAG激光辐照PIN光电探测器，获得了探测器响应度与入射强激光功率密度的变化关系。从实验数据可知，探测器被功率密度低于7.6105W/cm2的激光辐照后不会发生损伤，探测器对532nm参考光的响应度不变；当激光的功率密度超过1.27106W/cm2时，激光辐照后，探测器对532nm参考光的响应度开始下降，当探测器被功率密度为6.01106W/cm2的激光辐照后，响应度迅速下降，PN结遭到破坏是探测器响应度下降的根本原因,扫描电镜的结果与我们的分析相一致。Abstract: Responsivity is an important factor for reflecting the performance of photoelectric detector and could be altered if the detector is laser-induced damaged. A system for monitoring real-time responsivity of the detector was developed. A PIN detector was irradiated by Nd∶YAG laser with energy increasing gradually, the relationship between the responsivity of detector and the power density of incident laser was obtained. The detector remained its performance when irradiated by laser with the power density of Nd: YAG laser less than 7.6105W/cm2, the responsivity of the detector was constant for 532nm reference light. When the power density of laser was more than 1.27106W/cm2, with increasing incident laser power density, the responsivity of the detector was reduced slowly. When the power density of laser was more than 1.27106W/cm2, the responsivity of the detector was reduced sharply after being irradiated. The reason for the fall of responsivity was analyzed. The conclusion was confirmed by scanning electron microscope photographs (SEM).
- laser physics /
- responsivity /
- photoelectric detector /
- short-circuit current /
- laser irradiation
［1］KRUER M, ESTEROWITZ L, ALLEN R, et al. Thermal models for laser damage in InSb photovoltaic and photoconductive detectors［J］.Infrared Physics,1976,16(3):375-384.
［2］AMIT P S, AVINASHI K. Laser damage studies of silicon surfaces using ultra-short laser pulses［J］.Optics and Laser Technology, 2002,34(1):37-43.
ZHOU Yi-chun, DUAN Zhu-ping, XIE Bo-min,et al. A new development of laser damage mechanism research［J］. Chinese Journal of Theoretical and Applied Mechanics，1995，27(3):277-284.(in Chinese with an English abstract)
［4］贺元兴,江厚满. 激光辐照下PV型HgCdTe探测器反常响应机理［J］.强激光与粒子束, 2008,20(8)：1233-1237.
HE Yuan-xing，JIANG Hou-man. Abnormal response of PV-type HgCdTe detector under intense laser irradiation［J］. High Power Laser and Particle Beams, 2008,20(8):1233-1237. (in Chinese with an English abstract)
［5］陈德章, 张承铨,卿光弼,等. 激光对光电探测器的损伤阈值研究［J］.激光技术，1995,18(6):135-140.
CHEN De-zhang, ZHANG Cheng-quan, QING Guang-bi, et al. Research on laser damage threshold of photoelectric detector［J］. Laser Technology,1995,18(6):135-140. (in Chinese with an English abstract)
［6］张红,薛建国,成斌,等.10.6μm CO2激光对HgCdTe探测器破坏阈值的实验研究［J］.光电工程, 2006,33 (5):41-43.
ZHANG Hong，XUE Jian-guo, CHENG Bin,et al. Experiment study on the damage thresholds of HgCdTe detector irradiated by10.6μm CO2 laser［J］. Opto-Electronic Engineering, 2006,33(5):41-43. (in Chinese with an English abstract)
CHEN Ming-jun,PANG Qi-long,LIU Xin-yan. Finite element analysis on influence of micro-nano machined surface impurity on optical performance of crystal［J］. High Power Laser and Particle Beams, 2008，20(7):1182-1186. (in Chinese with an English abstract)
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