Comparison of reactive magnetron and reactive ion-beamsputtering for deposition of silicon oxide thin film
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摘要: 比较了磁控反应溅射(RMS)法与离子束反应溅射(RIBS)法沉积得到的氧化硅薄膜的光学特性，并确定了其对折射率n、消光系数k、沉积速率和混合工作气体Ar/O2中氧含量的依赖性关系。工作气体中O2含量大于15％时通过RMS法沉积的氧化硅薄膜在0.63m波长折射率约为1.52～1.55，消光系数低于10-5。当O2含量在80％以上时RIBS方法沉积氧化硅薄膜的折射率n=1.52～1.6，消光系数低于10-5。用RMS沉积SiO2薄膜，当氧气量超过15％时发生反应模式，此时沉积速率下降近5倍。而用RIBS时，沉积速率并不依赖氧气在混合工作气体中的含量。Abstract: The optical characteristics of silicon oxide thin films deposited by the reactive magnetron (RMS) method were compared to those deposited by the reactive ion-beam sputtering (RIBS) method. Dependence of refractive index n, extinction coefficient k and deposition rate on oxygen concentration in Ar/O2 working gas mixture were determined. Silicon oxide films with the refractive index of 1.52～1.55 and extinction coefficient less 10-5 at the wavelength of 0.63m were deposited by RMS method with O2 content greater than 15% of working gas mixture. Silicon oxide films with refractive index of 1.52～1.6 and extinction coefficient less 10-5 were deposited by RIBS method with O2 content more than 80% of working gas mixture. In the case of RMS method, the SiO2 film deposition rate decreases almost 5 times when the process is switched to the reactive mode (more than 15% O2). On the contrary, in the case of RIBS, the deposition rate does not depend on the O2 concentration in the working gas mixture.
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