离子注入SI—GaAs做激光器被动调Q元件的研究

详细信息

Study of Passive Q-switched Unit of Nd∶YAG Laser Using Ion-Implanted GaAs

1.
College of Applied Mathematics and Physics,Beijing Polytechnic University,Beijing 100022,China;
2.
Institute of Semiconductors,CAS,Beijing 100083,China

摘要: 本文从半导体材料GaAs的能级结构出发，探讨了GaAs做固体激光器被动调Q器件的可行性，对离子注入半绝缘GaAs用做Nd：YAG激光器中被动调Q元件的机理进行了实验研究，实验中腔型选择直腔式平平腔，Nd：YAG采用脉冲氙灯抽运，在腔型1Hz下获得了单脉冲宽度为62ns的调Q波形输出。
- GaAs /
- 被动调Q /
- 离子注入 /
- Nd∶YAG激光器
Abstract: Proceeding from the SI-GaAs's energy level structure, the feasibility of using the ion-implanted GaAs semiconductor material as a passive Q-switched unit of solid-state lasers is discussed. The dynamic characteristic of GaAs used as passive Q-switch device is investigated experimentally.In the experiment, flat-flat cavity was adopted and (Nd∶YAG) was pumped by a xenon lamp,and the Q-switched waveform of 62ns single pulse width was obtained at repetition rate of 1Hz.
- GaAs /
- passive Q-switched /
- ion-implantation /
- Nd∶YAG laser