Abstract: A new measurement method,carrier fringe method of Moiré interferometry，was studied. The strain was analyzed with the initial carrier fringes according to the change of the carrier fringes before and after deformation of an object. The experiment justified that the accuracy was controlled within the range of ±10με when the strain caused by the deformation of UUT was measured with the grating of 1200lp/mm combined with appropriate digital image processing method. The research indicates that the strain sensitivity is less than 1με. The average strain values of every row of U field and every column of V field are given by the method. This makes it possible to investigate the tiny strain and the tiny strain difference between the adjacent areas of a microfield. The technology can be used for further analysis of the correlative mechanics in MEMS.