中波红外3 μm~5 μm宽带通滤光片的研制

张建付, 杨崇民, 刘青龙, 王养云, 谢辉, 黎明, 刘永强, 杨华梅, 米高园, 李明伟

张建付, 杨崇民, 刘青龙, 王养云, 谢辉, 黎明, 刘永强, 杨华梅, 米高园, 李明伟. 中波红外3 μm~5 μm宽带通滤光片的研制[J]. 应用光学, 2013, 34(4): 695-699.
引用本文: 张建付, 杨崇民, 刘青龙, 王养云, 谢辉, 黎明, 刘永强, 杨华梅, 米高园, 李明伟. 中波红外3 μm~5 μm宽带通滤光片的研制[J]. 应用光学, 2013, 34(4): 695-699.
ZHANG Jian-fu, YANG Chong-min, LIU Qing-long, WANG Yang-yun, XIE Hui, LI Ming, LIU Yong-qiang, YANG Hua-mei, MI Gao-yuan, LI Ming-wei. Study and preparation of mid-wave infrared 3μm~5μm broad band pass filter[J]. Journal of Applied Optics, 2013, 34(4): 695-699.
Citation: ZHANG Jian-fu, YANG Chong-min, LIU Qing-long, WANG Yang-yun, XIE Hui, LI Ming, LIU Yong-qiang, YANG Hua-mei, MI Gao-yuan, LI Ming-wei. Study and preparation of mid-wave infrared 3μm~5μm broad band pass filter[J]. Journal of Applied Optics, 2013, 34(4): 695-699.

中波红外3 μm~5 μm宽带通滤光片的研制

详细信息
    通讯作者:

    张建付(1979-),男,河南林州人,高级工程师,主要从事光学薄膜技术研究工作。 Email: zjf205@126.com

  • 中图分类号: TN205

Study and preparation of mid-wave infrared 3μm~5μm broad band pass filter

  • 摘要: 中波红外宽带通滤光膜通常膜系层数多,膜层总厚度非常大(厚度达到10 m左右),膜层的镀制工艺难度较大。通过分析红外带通滤光片几种设计方法的特点,并结合实际镀制工艺技术,采用了长波通与短波通及非规整薄膜设计技术相结合的方法,设计了以锗材料为基底的中波3 m~5 m宽带通滤光膜。该设计大幅度降低了膜层的总厚度(约为8.65 m),缩短了膜层的镀制周期,提高了膜层的牢固度;在膜层的镀制工艺过程中,通过改变薄膜材料的蒸发速率、修正蒸发硫化锌材料时电子枪的扫描方式、调整蒸发材料在坩埚中的装载方法,使膜层获得了优异的光谱性能,其通带平均透过率大于96%,截止区域的平均透过率小于1%。
    Abstract: The plating process of the mid-wave infrared broad-band pass filter is difficult because of multi-layers, and the total thickness of film layers is very big ( the thickness is up to about 10 m). Through analysis of the design features of several infrared band pass filters, and combining with the actual plating technology, the 3 m~5 m broad-band pass filter with germanium substrate was designed by using the method of combining long-wavepass, shortwave-pass and irregular film design technology. The design reduces the total thickness of film ( about 8.65 m) greatly as well as the deposition time, and the firmness of the film is improved. The film obtains excellent spectral properties by changing the evaporation rate of film materials, correcting the scan mode of the electron gun when vaporizing the ZnS material, and adjusting the loading method of the evaporation material in the crucible. The average transmittance is more than 96% in the passband and less than 1% in cut-off region.
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  • 刊出日期:  2013-07-14

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