Abstract: In order to apply varied-doping GaAs material to low-light-level image intensifier, the transmission-mode varied-doping GaAs photocathode experiment was carried out and the transmission-mode varied-doping GaAs photocathodes with two inversion structures were prepared. By testing the carrier concentration change of the GaAs photocathode before and after glass bonding, it is found that the carrier concentration increases after bonding at a high temperature. Moreover, by testing the transmission-mode varied-doping GaAs photocathode of high-temperature activation, result shows that the varieddoping GaAs photocathode still has a high spectral response in the band of 450 nm ~ 550 nm.