Development of domestic imaging circuit based on EBAPS
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摘要:
电子轰击型有源像素传感器（electron bombarded active pixel sensor，EBAPS）具有高增益、快响应、低功耗和低成本等优点，研究EBAPS已成为微光夜视成像技术的一个重要发展方向。国内相关机构在电路设计时，对于EBAPS成像电路中所涉及到的芯片主要还是依赖于进口，为加快EBAPS器件成像电路的国产化进程，研制了一套基于EBAPS的全国产成像电路评估板。该电路以国产复旦微FMK50t系列的FPGA芯片为主控芯片，通过设计CMOS( complementary metal oxide semiconductor) 驱动模块、数据处理模块、Cameralink显示模块等，分别完成对EBAPS器件的驱动、数字图像处理和实时显示等功能。实验结果表明：在轰击高压为负1 500 V的情况下，该国产EBAPS相机的最低探测照度可达到10−3 lx量级。
Abstract:Electron bombarded active pixel sensor (EBAPS) has the advantages of high gain, fast response, low power consumption and low cost. Research on EBAPS has become an important development direction of low-light-level night vision imaging technology. In the circuit design of relevant domestic institutions, the chips involved in the EBAPS imaging circuit mainly rely on imports. In order to accelerate the localization process of imaging circuits of EBAPS devices, a set of domestic-produced imaging circuit evaluation board based on EBAPS was developed. The circuit used the FPGA chip of domestic Fudan Micro FMK50t series as the main control chip, and completed the functions of driving the EBAPS device, digital image processing and real-time display by designing a complementary metal oxide semiconductor (CMOS) driver module, a data processing module, and a Cameralink display module. The experimental results show that when the bombardment negative high voltage is 1 500 V, the minimum detection illuminance of the domestic EBAPS camera can reach the order of 10−3 lx.
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图 9 算法前后EBAPS成像对比结果
Figure 9. Comparison results of EBAPS imaging before and after algorithm
表 1 APS芯片主要技术参数
Table 1 Main technical parameters of APS chip
技术参数 指标 供电电压/V 3.5 分辨率/pixel 1 280(H)×1 024(V) 像素尺寸/ μm 12.5 像素时钟频率/MHz ≤80 光谱范围/μm 0.3~0.97 存储温度/℃ −40～+80 输出数据格式 差分模拟（2 V & 1.2 V～2 V） 
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