Spectral information of silicon nitride ceramics irradiated by laser
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摘要:
氮化硅陶瓷具备耐腐蚀、耐磨损和耐高低温冲击的优良性能，常用于高超声速飞行器的热防护材料，激光武器是未来高超声速目标拦截和打击的主要技术手段。采用Nd3+:YAG固体脉冲激光器作为辐照源，热压烧结氮化硅陶瓷为靶材，中阶梯光栅光谱仪为探测器搭建实验系统，采集激光波长1 064 nm，脉宽15 ns，不同能量（50 mJ～500 mJ）作用靶材的辐射光谱。基于美国标准技术与研究院原子光谱数据库对谱线指认，利用玻尔兹曼斜线法计算得到等离子体电子温度范围为6 203 K～6 826 K，斯塔克展宽法计算等离子体电子密度范围为8.40×1015 cm−3～1.14×1016 cm−3，等离子体电子振荡频率为8.23×1011 Hz～9.58×1011 Hz，随着激光能量增加电子温度整体呈上升趋势，电子密度变化存在波动。
Abstract:Silicon nitride ceramics have excellent properties of corrosion resistance, wear resistance and resistance to high-low temperature impact, which are commonly used in thermal protection materials of hypersonic vehicles. The laser weapons are the main technical means for intercepting and striking the hypersonic targets in the future. The Nd3+:YAG solid-state pulsed laser was used as an irradiation source and hot-pressed sintered silicon nitride ceramic was used as the target. Meanwhile, the echelle grating spectrometer was used as the detector to construct an experimental system. The radiation spectra of the target with a laser wavelength of 1 064 nm, pulse width of 15 ns, and different energies (50 mJ~500 mJ) were collected. Line identification was based on the national institute of standards and technology (NIST) atomic spectrum database. According to the Boltzmann method, the plasma electron temperatures range from 6 203 K~6 826 K, the plasma electron density range calculated by the Stark broadening method is 8.40×1015 cm−3~1.14×1016 cm−3, and the electronic oscillation frequency is 8.23×1011~9.58×1011 Hz. With the increase of laser energy, the electron temperature demonstrates an overall upward trend, and the change of electron density fluctuates.
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图 1 激光辐照氮化硅陶瓷测试装置示意图
Figure 1. Schematic diagram of experimental device for silicon nitride ceramics irradiated by laser
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图 2 激光能量50 mJ～500 mJ辐照氮化硅陶瓷光谱图
Figure 2. Spectrogram of irradiated silicon nitride ceramics with laser energy of 50 mJ~500 mJ
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图 3 激光能量500 mJ辐照氮化硅陶瓷光谱图
Figure 3. Spectrogram of irradiated silicon nitride ceramics with laser energy of 500 mJ
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图 5 不同激光能量下等离子体电子温度计算结果
Figure 5. Calculation results of plasma electron temperature at different laser energies
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图 6 不同激光能量下等离子体电子密度计算结果
Figure 6. Calculation results of plasma electron density at different laser energies
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图 7 不同激光能量下等离子体电子振荡频率计算结果
Figure 7. Calculation results of plasma electron oscillation frequencies at different laser energies
表 1 氮化硅陶瓷物理特性
Table 1 Physical properties of silicon nitride ceramics
参数 值 密度/g·cm−3 3.2 烧结温度/℃ 1 700 硬度/HV 1 500～1 800 抗折强度/MPa 700 热膨胀系数(0～1000℃)/℃ 10.5×10−6 热传导率(25～300℃)/W·m·K−1 18 
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表 2 激光辐照氮化硅陶瓷光谱参数
Table 2 Spectral parameters of silicon nitride ceramics irradiated by laser
原子/离子 波长/nm 跃迁几率·
统计权重/s−1下能级能量$ {E_i} $/eV 上能级能量$ {E_i} $/eV 下能级电子组态 上能级电子组态 Si I 288.24 6.51×108 0.780957 5.082345 3s23p2 3s23p4s Si III 324.29 7.05×108 21.73892 25.56257 3s4p 3s5s Si III 396.23 1.82×107 24.99515 28.12213 3s4d 3p4s Si III 437.61 2.07×107 25.39544 28.22687 3s4f 3s5d O I 615.54 6.86×107 10.74093 12.75369 2s22p3(4so)3p 2s22p3(4so)4d N I 821.72 1.84×108 10.33589 11.84447 2s22p2(3p)3s 2s22p2(3p)3p
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