Abstract: Electron bombarded (EB) CMOS sensor process defects cause blind elements in the image, which has a greater impact on image quality. A new blind element detection algorithm based on cross calculation of multiple images was proposed. For untargeted images with different illumination brightness, by setting different thresholds, the image was binarized; then multiple binarized images were calculated according to the position of “bright spots”, and the blind element marking template image was generated. Finally, classification and selection were performed according to the position of blind element, and the final blind element mark template was obtained. The final blind element mark template information provided a reliable basis for evaluating the quality of EBCMOS sensor and the blind element compensation in actual follow-up products.